DMN2015UFDE-7 - MOSFET N-CH 20V 10.5A U-DFN

Fabrikatzailea Taldea zenbakia

DMN2015UFDE-7

Barne Taldea zenbakia

ABC-DMN2015UFDE-7

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH 20V 10.5A U-DFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

3041059 Pieces

Erreferentzia Prezioa

~~USD 0.107635~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN2015UFDE-7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN2015UFDE-7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN2015UFDE-7

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH 20V 10.5A U-DFN

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 10.5A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 11.6 mOhm @ 8.5A, 4.5V

Vgs (th) (Max) @ Id : 1.1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 45.6nC @ 10V

Vgs (Max) : ±12V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1779pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 660mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : U-DFN2020-6 (Type E)

Paketea / Kaxa : 6-PowerUDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN2 , DMN201

Dokumentuak DMN2015UFDE-7

Fitxak : DMN2015UFDE-7.pdf

produktu erlazionatutako DMN2015UFDE-7 Diodes Incorporated

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