ZXMN2F30FHQTA - MOSFET N-CH 20V 4.9A SOT23-3

Fabrikatzailea Taldea zenbakia

ZXMN2F30FHQTA

Barne Taldea zenbakia

ABC-ZXMN2F30FHQTA

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH 20V 4.9A SOT23-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

4641252 Pieces

Erreferentzia Prezioa

~~USD 0.070525~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute ZXMN2F30FHQTA stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak ZXMN2F30FHQTA

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : ZXMN2F30FHQTA

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH 20V 4.9A SOT23-3

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 4.9A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 45 mOhm @ 2.5A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 4.8nC @ 10V

Vgs (Max) : ±12V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 452pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.4W

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-23-3

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : ZXMN , ZXMN2F

Dokumentuak ZXMN2F30FHQTA

Fitxak : ZXMN2F30FHQTA.pdf

produktu erlazionatutako ZXMN2F30FHQTA Diodes Incorporated

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