EPC2100ENG - GAN TRANS 2N-CH 30V BUMPED DIE

Fabrikatzailea Taldea zenbakia

EPC2100ENG

Barne Taldea zenbakia

ABC-EPC2100ENG

fabrikatzailea

EPC

Azalpen laburra

GAN TRANS 2N-CH 30V BUMPED DIE

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

52884 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute EPC2100ENG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak EPC2100ENG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : EPC2100ENG

fabrikatzailea : EPC

deskribapena : GAN TRANS 2N-CH 30V BUMPED DIE

Series : eGaN®

Taldearen egoera : Discontinued at Digi-Key

FET Mota : 2 N-Channel (Half Bridge)

FET Ezaugarria : GaNFET (Gallium Nitride)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 10A (Ta), 40A (Ta)

Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA

Ateko karga (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V

Potentzia - Max : -

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : Die

Hornitzaileentzako gailu paketea : Die

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : EPC , EPC21

Dokumentuak EPC2100ENG

Fitxak : EPC2100ENG.pdf

produktu erlazionatutako EPC2100ENG EPC

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