BSZ086P03NS3GATMA1 - MOSFET P-CH 30V 40A TSDSON-8

Fabrikatzailea Taldea zenbakia

BSZ086P03NS3GATMA1

Barne Taldea zenbakia

ABC-BSZ086P03NS3GATMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET P-CH 30V 40A TSDSON-8

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2074555 Pieces

Erreferentzia Prezioa

~~USD 0.15778~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BSZ086P03NS3GATMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BSZ086P03NS3GATMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BSZ086P03NS3GATMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET P-CH 30V 40A TSDSON-8

Series : OptiMOS™

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 13.5A (Ta), 40A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 8.6 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3.1V @ 105µA

Ateko karga (Qg) (Max) @ Vgs : 57.5nC @ 10V

Vgs (Max) : ±25V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4785pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.1W (Ta), 69W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PG-TSDSON-8

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BSZ086 , BSZ086P03

Dokumentuak BSZ086P03NS3GATMA1

Fitxak : BSZ086P03NS3GATMA1.pdf

produktu erlazionatutako BSZ086P03NS3GATMA1 Infineon Technologies

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