FDFMA2P853T - MOSFET P-CH 20V 3A 6-MICROFET

Fabrikatzailea Taldea zenbakia

FDFMA2P853T

Barne Taldea zenbakia

ABC-FDFMA2P853T

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET P-CH 20V 3A 6-MICROFET

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

67328 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDFMA2P853T stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDFMA2P853T

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDFMA2P853T

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET P-CH 20V 3A 6-MICROFET

Series : PowerTrench®

Taldearen egoera : Obsolete

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 120 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1.3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 6nC @ 4.5V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 435pF @ 10V

FET Ezaugarria : Schottky Diode (Isolated)

Potentzia xahutzea (Max) : 1.4W (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : MicroFET 2x2 Thin

Paketea / Kaxa : 6-UDFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDF , FDFMA

Dokumentuak FDFMA2P853T

Fitxak : FDFMA2P853T.pdf

produktu erlazionatutako FDFMA2P853T ON Semiconductor

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