IRF6655TR1PBF - MOSFET N-CH 100V 4.2A DIRECTFET

Fabrikatzailea Taldea zenbakia

IRF6655TR1PBF

Barne Taldea zenbakia

ABC-IRF6655TR1PBF

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 100V 4.2A DIRECTFET

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

34374 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRF6655TR1PBF stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRF6655TR1PBF

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRF6655TR1PBF

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 100V 4.2A DIRECTFET

Series : HEXFET®

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 4.2A (Ta), 19A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 62 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 4.8V @ 25µA

Ateko karga (Qg) (Max) @ Vgs : 11.7nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 530pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.2W (Ta), 42W (Tc)

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : DIRECTFET™ SH

Paketea / Kaxa : DirectFET™ Isometric SH

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRF6 , IRF665

Dokumentuak IRF6655TR1PBF

Fitxak : IRF6655TR1PBF.pdf

produktu erlazionatutako IRF6655TR1PBF Infineon Technologies

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