FDS6670A - MOSFET N-CH 30V 13A 8-SOIC

Fabrikatzailea Taldea zenbakia

FDS6670A

Barne Taldea zenbakia

ABC-FDS6670A

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 30V 13A 8-SOIC

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1899842 Pieces

Erreferentzia Prezioa

~~USD 0.17229~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDS6670A stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDS6670A

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDS6670A

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 30V 13A 8-SOIC

Series : PowerTrench®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 13A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 30nC @ 5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2220pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-SOIC

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FD , FDS6

Dokumentuak FDS6670A

Fitxak : FDS6670A.pdf

produktu erlazionatutako FDS6670A ON Semiconductor

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