SIDC30D120E6X1SA2 - DIODE GEN PURP 1.2KV 35A WAFER

Fabrikatzailea Taldea zenbakia

SIDC30D120E6X1SA2

Barne Taldea zenbakia

ABC-SIDC30D120E6X1SA2

fabrikatzailea

Infineon Technologies

Azalpen laburra

DIODE GEN PURP 1.2KV 35A WAFER

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

34221 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SIDC30D120E6X1SA2 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SIDC30D120E6X1SA2

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SIDC30D120E6X1SA2

fabrikatzailea : Infineon Technologies

deskribapena : DIODE GEN PURP 1.2KV 35A WAFER

Series : -

Taldearen egoera : Discontinued at Digi-Key

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 1200V

Oraingoa - Batez besteko laukizatua (Io) : 35A (DC)

Tentsioa - Aurrera (Vf) (Max) @ If : 1.9V @ 35A

Abiadura : Standard Recovery >500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : -

Oraingoa - alderantzizko ihesa @ Vr : 27µA @ 1200V

Edukiera @ Vr, F : -

Muntatzeko mota : Surface Mount

Paketea / Kaxa : Die

Hornitzaileentzako gailu paketea : Sawn on foil

Eragiketa tenperatura - Junction : -55°C ~ 150°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SIDC3 , SIDC30D1

Dokumentuak SIDC30D120E6X1SA2

Fitxak : SIDC30D120E6X1SA2.pdf

produktu erlazionatutako SIDC30D120E6X1SA2 Infineon Technologies

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