BSC098N10NS5ATMA1 - MOSFET N-CH 100V 60A 8TDSON

Fabrikatzailea Taldea zenbakia

BSC098N10NS5ATMA1

Barne Taldea zenbakia

ABC-BSC098N10NS5ATMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 100V 60A 8TDSON

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1022784 Pieces

Erreferentzia Prezioa

~~USD 0.32003~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BSC098N10NS5ATMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BSC098N10NS5ATMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BSC098N10NS5ATMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 100V 60A 8TDSON

Series : OptiMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 60A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 9.8 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 3.8V @ 36µA

Ateko karga (Qg) (Max) @ Vgs : 28nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2100pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta), 69W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PG-TDSON-8

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BSC09 , BSC098N1

Dokumentuak BSC098N10NS5ATMA1

Fitxak : BSC098N10NS5ATMA1.pdf

produktu erlazionatutako BSC098N10NS5ATMA1 Infineon Technologies

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