RJK60S7DPK-M0#T0 - MOSFET N-CH 600V 30A TO-3PSG

Fabrikatzailea Taldea zenbakia

RJK60S7DPK-M0#T0

Barne Taldea zenbakia

ABC-RJK60S7DPK-M0#T0

fabrikatzailea

Renesas Electronics America

Azalpen laburra

MOSFET N-CH 600V 30A TO-3PSG

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

106872 Pieces

Erreferentzia Prezioa

~~USD 3.5~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RJK60S7DPK-M0#T0 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RJK60S7DPK-M0#T0

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RJK60S7DPK-M0#T0

fabrikatzailea : Renesas Electronics America

deskribapena : MOSFET N-CH 600V 30A TO-3PSG

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 30A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 125 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : -

Ateko karga (Qg) (Max) @ Vgs : 39nC @ 10V

Vgs (Max) : +30V, -20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2300pF @ 25V

FET Ezaugarria : Super Junction

Potentzia xahutzea (Max) : 227.2W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-3PSG

Paketea / Kaxa : TO-3P-3, SC-65-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RJK60 , RJK60S7D

Dokumentuak RJK60S7DPK-M0#T0

Fitxak : RJK60S7DPK-M0#T0.pdf

produktu erlazionatutako RJK60S7DPK-M0#T0 Renesas Electronics America

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