SQJA20EP-T1_GE3 - MOSFET N-CH 200V PWRPAK SO-8L

Fabrikatzailea Taldea zenbakia

SQJA20EP-T1_GE3

Barne Taldea zenbakia

ABC-SQJA20EP-T1_GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET N-CH 200V PWRPAK SO-8L

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1026410 Pieces

Erreferentzia Prezioa

~~USD 0.3189~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SQJA20EP-T1_GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SQJA20EP-T1_GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SQJA20EP-T1_GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET N-CH 200V PWRPAK SO-8L

Series : Automotive, AEC-Q101, TrenchFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 22.5A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 7.5V, 10V

Rds On (Max) @ Id, Vgs : 50 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 27nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1300pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 68W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PowerPAK® SO-8

Paketea / Kaxa : PowerPAK® SO-8

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SQJA2 , SQJA20E

Dokumentuak SQJA20EP-T1_GE3

Fitxak : SQJA20EP-T1_GE3.pdf

produktu erlazionatutako SQJA20EP-T1_GE3 Vishay Siliconix

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