SQJ431AEP-T1_GE3 - MOSFET P-CHAN 200V

Fabrikatzailea Taldea zenbakia

SQJ431AEP-T1_GE3

Barne Taldea zenbakia

ABC-SQJ431AEP-T1_GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET P-CHAN 200V

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

822535 Pieces

Erreferentzia Prezioa

~~USD 0.397945~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SQJ431AEP-T1_GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SQJ431AEP-T1_GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SQJ431AEP-T1_GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET P-CHAN 200V

Series : Automotive, AEC-Q101, TrenchFET®

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 9.4A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 305 mOhm @ 3.8A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 85nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3700pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 68W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PowerPAK® SO-8

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SQJ43 , SQJ431AE

Dokumentuak SQJ431AEP-T1_GE3

Fitxak : SQJ431AEP-T1_GE3.pdf

produktu erlazionatutako SQJ431AEP-T1_GE3 Vishay Siliconix

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