DMN62D1LFDQ-13 - 2N7002 FAMILY X1-DFN1212-3 TR 1

Fabrikatzailea Taldea zenbakia

DMN62D1LFDQ-13

Barne Taldea zenbakia

ABC-DMN62D1LFDQ-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

2N7002 FAMILY X1-DFN1212-3 TR 1

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

6483603 Pieces

Erreferentzia Prezioa

~~USD 0.050485~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN62D1LFDQ-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN62D1LFDQ-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN62D1LFDQ-13

fabrikatzailea : Diodes Incorporated

deskribapena : 2N7002 FAMILY X1-DFN1212-3 TR 1

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 400mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.5V, 4V

Rds On (Max) @ Id, Vgs : 2 Ohm @ 100mA, 4V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 0.55nC @ 4.5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 36pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 500mW

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : U-DFN1212-3

Paketea / Kaxa : 3-XDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN6 , DMN62D1

Dokumentuak DMN62D1LFDQ-13

Fitxak : DMN62D1LFDQ-13.pdf

produktu erlazionatutako DMN62D1LFDQ-13 Diodes Incorporated

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