RD3P200SNFRATL - RD3P200SNFRA IS A POWER MOSFET F

Fabrikatzailea Taldea zenbakia

RD3P200SNFRATL

Barne Taldea zenbakia

ABC-RD3P200SNFRATL

fabrikatzailea

Rohm Semiconductor

Azalpen laburra

RD3P200SNFRA IS A POWER MOSFET F

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

557333 Pieces

Erreferentzia Prezioa

~~USD 0.5873~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RD3P200SNFRATL stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RD3P200SNFRATL

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RD3P200SNFRATL

fabrikatzailea : Rohm Semiconductor

deskribapena : RD3P200SNFRA IS A POWER MOSFET F

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 20A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4V, 10V

Rds On (Max) @ Id, Vgs : 46 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 55nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2100pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 20W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-252

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RD3P , RD3P200

Dokumentuak RD3P200SNFRATL

Fitxak : RD3P200SNFRATL.pdf

produktu erlazionatutako RD3P200SNFRATL Rohm Semiconductor

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