STP315N10F7 - MOSFET N-CH 100V 180A TO-220AB

Fabrikatzailea Taldea zenbakia

STP315N10F7

Barne Taldea zenbakia

ABC-STP315N10F7

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 100V 180A TO-220AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

113520 Pieces

Erreferentzia Prezioa

~~USD 3.295~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STP315N10F7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STP315N10F7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STP315N10F7

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 100V 180A TO-220AB

Series : Automotive, AEC-Q101, DeepGATE™, STripFET™ VII

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 180A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.7 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 180nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 12800pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 315W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STP , STP31

Dokumentuak STP315N10F7

Fitxak : STP315N10F7.pdf

produktu erlazionatutako STP315N10F7 STMicroelectronics

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