STQ2HNK60ZR-AP - MOSFET N-CH 600V 0.5A TO-92

Fabrikatzailea Taldea zenbakia

STQ2HNK60ZR-AP

Barne Taldea zenbakia

ABC-STQ2HNK60ZR-AP

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 600V 0.5A TO-92

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1797782 Pieces

Erreferentzia Prezioa

~~USD 0.18207~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STQ2HNK60ZR-AP stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STQ2HNK60ZR-AP

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STQ2HNK60ZR-AP

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 600V 0.5A TO-92

Series : SuperMESH™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 500mA (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.8 Ohm @ 1A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 50µA

Ateko karga (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 280pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-92-3

Paketea / Kaxa : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STQ2 , STQ2HNK

Dokumentuak STQ2HNK60ZR-AP

Fitxak : STQ2HNK60ZR-AP.pdf

produktu erlazionatutako STQ2HNK60ZR-AP STMicroelectronics

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