FDMC86116LZ - MOSFET N-CH 100V 3.3A 8-MLP

Fabrikatzailea Taldea zenbakia

FDMC86116LZ

Barne Taldea zenbakia

ABC-FDMC86116LZ

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 100V 3.3A 8-MLP

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1865626 Pieces

Erreferentzia Prezioa

~~USD 0.17545~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDMC86116LZ stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDMC86116LZ

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDMC86116LZ

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 100V 3.3A 8-MLP

Series : PowerTrench®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3.3A (Ta), 7.5A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 103 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 6nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 310pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.3W (Ta), 19W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-MLP (3.3x3.3)

Paketea / Kaxa : 8-PowerWDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDM , FDMC8

Dokumentuak FDMC86116LZ

Fitxak : FDMC86116LZ.pdf

produktu erlazionatutako FDMC86116LZ ON Semiconductor

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