STS9P2UH7 - MOSFET P-CH 20V 9A 8-SOIC

Fabrikatzailea Taldea zenbakia

STS9P2UH7

Barne Taldea zenbakia

ABC-STS9P2UH7

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET P-CH 20V 9A 8-SOIC

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

99472 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STS9P2UH7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STS9P2UH7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STS9P2UH7

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET P-CH 20V 9A 8-SOIC

Series : STripFET™

Taldearen egoera : Obsolete

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 9A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.5V, 4.5V

Rds On (Max) @ Id, Vgs : 22.5 mOhm @ 4.5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 22nC @ 4.5V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2390pF @ 16V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.7W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-SO

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STS , STS9

Dokumentuak STS9P2UH7

Fitxak : STS9P2UH7.pdf

produktu erlazionatutako STS9P2UH7 STMicroelectronics

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