DMN60H080DS-13 - MOSFET N-CH 600V 80MA SOT23

Fabrikatzailea Taldea zenbakia

DMN60H080DS-13

Barne Taldea zenbakia

ABC-DMN60H080DS-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH 600V 80MA SOT23

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

7591017 Pieces

Erreferentzia Prezioa

~~USD 0.04312~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN60H080DS-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN60H080DS-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN60H080DS-13

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH 600V 80MA SOT23

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 80mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 100 Ohm @ 60mA, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 1.7nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 25pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.1W (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-23-3

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN6 , DMN60H0

Dokumentuak DMN60H080DS-13

Fitxak : DMN60H080DS-13.pdf

produktu erlazionatutako DMN60H080DS-13 Diodes Incorporated

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