IMBD4448-HE3-08 - DIODE GEN PURP 75V 150MA SOT23

Fabrikatzailea Taldea zenbakia

IMBD4448-HE3-08

Barne Taldea zenbakia

ABC-IMBD4448-HE3-08

fabrikatzailea

Vishay Semiconductor Diodes Division

Azalpen laburra

DIODE GEN PURP 75V 150MA SOT23

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

14684824 Pieces

Erreferentzia Prezioa

~~USD 0.02229~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IMBD4448-HE3-08 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IMBD4448-HE3-08

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IMBD4448-HE3-08

fabrikatzailea : Vishay Semiconductor Diodes Division

deskribapena : DIODE GEN PURP 75V 150MA SOT23

Series : Automotive, AEC-Q101

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 75V

Oraingoa - Batez besteko laukizatua (Io) : 150mA

Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 10mA

Abiadura : Small Signal =< 200mA (Io), Any Speed

Alderantzizko berreskurapen denbora (trr) : 4ns

Oraingoa - alderantzizko ihesa @ Vr : 2.5µA @ 70V

Edukiera @ Vr, F : -

Muntatzeko mota : Surface Mount

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

Hornitzaileentzako gailu paketea : SOT-23

Eragiketa tenperatura - Junction : 150°C (Max)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IMBD4 , IMBD444

Dokumentuak IMBD4448-HE3-08

Fitxak : IMBD4448-HE3-08.pdf

produktu erlazionatutako IMBD4448-HE3-08 Vishay Semiconductor Diodes Division

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