NTLJS4159NT1G - MOSFET N-CH 30V 3.6A 6DFN

Fabrikatzailea Taldea zenbakia

NTLJS4159NT1G

Barne Taldea zenbakia

ABC-NTLJS4159NT1G

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 30V 3.6A 6DFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

59336 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NTLJS4159NT1G stock saltzen da.

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zehaztapenak NTLJS4159NT1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NTLJS4159NT1G

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 30V 3.6A 6DFN

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3.6A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 35 mOhm @ 2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 13nC @ 4.5V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1045pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 700mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 6-WDFN (2x2)

Paketea / Kaxa : 6-WDFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NTLJ , NTLJS4

Dokumentuak NTLJS4159NT1G

Fitxak : NTLJS4159NT1G.pdf

produktu erlazionatutako NTLJS4159NT1G ON Semiconductor

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