TSM80N1R2CL C0G - MOSFET N-CH 800V 5.5A TO262S

Fabrikatzailea Taldea zenbakia

TSM80N1R2CL C0G

Barne Taldea zenbakia

ABC-TSM80N1R2CL C0G

fabrikatzailea

Taiwan Semiconductor Corporation

Azalpen laburra

MOSFET N-CH 800V 5.5A TO262S

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

305900 Pieces

Erreferentzia Prezioa

~~USD 1.07~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TSM80N1R2CL C0G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TSM80N1R2CL C0G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TSM80N1R2CL C0G

fabrikatzailea : Taiwan Semiconductor Corporation

deskribapena : MOSFET N-CH 800V 5.5A TO262S

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 5.5A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.2 Ohm @ 1.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 19.4nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 685pF @ 100V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 110W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-262S (I2PAK)

Paketea / Kaxa : TO-262-3 Short Leads, I²Pak

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TSM80 , TSM80N1

Dokumentuak TSM80N1R2CL C0G

Fitxak : TSM80N1R2CL C0G.pdf

produktu erlazionatutako TSM80N1R2CL C0G Taiwan Semiconductor Corporation

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