DMN1008UFDF-7 - MOSFET N-CH30V SC-59

Fabrikatzailea Taldea zenbakia

DMN1008UFDF-7

Barne Taldea zenbakia

ABC-DMN1008UFDF-7

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH30V SC-59

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

4165224 Pieces

Erreferentzia Prezioa

~~USD 0.078585~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN1008UFDF-7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN1008UFDF-7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN1008UFDF-7

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH30V SC-59

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 12V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 12.2A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 23.4nC @ 8V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 995pF @ 6V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 700mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : U-DFN2020-6 (Type F)

Paketea / Kaxa : 6-UDFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN1 , DMN100

Dokumentuak DMN1008UFDF-7

Fitxak : DMN1008UFDF-7.pdf

produktu erlazionatutako DMN1008UFDF-7 Diodes Incorporated

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