STSJ100NHS3LL - MOSFET N-CH 30V 20A PWR8SOIC

Fabrikatzailea Taldea zenbakia

STSJ100NHS3LL

Barne Taldea zenbakia

ABC-STSJ100NHS3LL

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 30V 20A PWR8SOIC

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

98752 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STSJ100NHS3LL stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STSJ100NHS3LL

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STSJ100NHS3LL

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 30V 20A PWR8SOIC

Series : STripFET™ III

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 100A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 35nC @ 4.5V

Vgs (Max) : ±16V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4200pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3W (Ta), 70W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-SOIC-EP

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width) Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STSJ , STSJ10

Dokumentuak STSJ100NHS3LL

Fitxak : STSJ100NHS3LL.pdf

produktu erlazionatutako STSJ100NHS3LL STMicroelectronics

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