ZXMN3F31DN8TA - MOSFET 2N-CH 30V 5.7A 8SOIC

Fabrikatzailea Taldea zenbakia

ZXMN3F31DN8TA

Barne Taldea zenbakia

ABC-ZXMN3F31DN8TA

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET 2N-CH 30V 5.7A 8SOIC

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1352575 Pieces

Erreferentzia Prezioa

~~USD 0.242~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute ZXMN3F31DN8TA stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak ZXMN3F31DN8TA

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : ZXMN3F31DN8TA

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET 2N-CH 30V 5.7A 8SOIC

Series : -

Taldearen egoera : Active

FET Mota : 2 N-Channel (Dual)

FET Ezaugarria : Logic Level Gate

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 5.7A

Rds On (Max) @ Id, Vgs : 24 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 12.9nC @ 10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 608pF @ 15V

Potentzia - Max : 1.8W

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

Hornitzaileentzako gailu paketea : 8-SO

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : ZXMN , ZXMN3F

Dokumentuak ZXMN3F31DN8TA

Fitxak : ZXMN3F31DN8TA.pdf

produktu erlazionatutako ZXMN3F31DN8TA Diodes Incorporated

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