IXFN210N30P3 - MOSFET N-CH 300V 192A SOT-227

Fabrikatzailea Taldea zenbakia

IXFN210N30P3

Barne Taldea zenbakia

ABC-IXFN210N30P3

fabrikatzailea

IXYS

Azalpen laburra

MOSFET N-CH 300V 192A SOT-227

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

86688 Pieces

Erreferentzia Prezioa

~~USD 17.25~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IXFN210N30P3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IXFN210N30P3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IXFN210N30P3

fabrikatzailea : IXYS

deskribapena : MOSFET N-CH 300V 192A SOT-227

Series : HiPerFET™, Polar3™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 300V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 192A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 105A, 10V

Vgs (th) (Max) @ Id : 5V @ 8mA

Ateko karga (Qg) (Max) @ Vgs : 268nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 16200pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1500W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Chassis Mount

Hornitzaileentzako gailu paketea : SOT-227B

Paketea / Kaxa : SOT-227-4, miniBLOC

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IXFN , IXFN21

Dokumentuak IXFN210N30P3

Fitxak : IXFN210N30P3.pdf

produktu erlazionatutako IXFN210N30P3 IXYS

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