TN0106N3-G-P003 - MOSFET N-CH 60V 350MA TO92-3

Fabrikatzailea Taldea zenbakia

TN0106N3-G-P003

Barne Taldea zenbakia

ABC-TN0106N3-G-P003

fabrikatzailea

Microchip Technology

Azalpen laburra

MOSFET N-CH 60V 350MA TO92-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1025129 Pieces

Erreferentzia Prezioa

~~USD 0.3193~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TN0106N3-G-P003 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TN0106N3-G-P003

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TN0106N3-G-P003

fabrikatzailea : Microchip Technology

deskribapena : MOSFET N-CH 60V 350MA TO92-3

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 350mA (Tj)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 3 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 2V @ 500µA

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 60pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-92-3

Paketea / Kaxa : TO-226-3, TO-92-3 (TO-226AA)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TN010 , TN0106N

Dokumentuak TN0106N3-G-P003

Fitxak : TN0106N3-G-P003.pdf

produktu erlazionatutako TN0106N3-G-P003 Microchip Technology

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