SIZ322DT-T1-GE3 - MOSFET 2 N-CH 25V 30A 8-POWER33

Fabrikatzailea Taldea zenbakia

SIZ322DT-T1-GE3

Barne Taldea zenbakia

ABC-SIZ322DT-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET 2 N-CH 25V 30A 8-POWER33

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1767598 Pieces

Erreferentzia Prezioa

~~USD 0.18518~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SIZ322DT-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SIZ322DT-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SIZ322DT-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET 2 N-CH 25V 30A 8-POWER33

Series : TrenchFET® Gen IV

Taldearen egoera : Active

FET Mota : 2 N-Channel (Dual)

FET Ezaugarria : Standard

Xukatu iturburuko tentsioa (Vdss) : 25V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 30A (Tc)

Rds On (Max) @ Id, Vgs : 6.35 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 20.1nC @ 10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 950pF @ 12.5V

Potentzia - Max : 16.7W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-PowerWDFN

Hornitzaileentzako gailu paketea : 8-Power33 (3x3)

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SIZ32 , SIZ322D

Dokumentuak SIZ322DT-T1-GE3

Fitxak : SIZ322DT-T1-GE3.pdf

produktu erlazionatutako SIZ322DT-T1-GE3 Vishay Siliconix

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