SI4626ADY-T1-GE3 - MOSFET N-CH 30V 30A 8-SOIC

Fabrikatzailea Taldea zenbakia
Barne Taldea zenbakia
fabrikatzailea
Azalpen laburra
MOSFET N-CH 30V 30A 8-SOIC
RoHS Status
Doinua libre / RoHS betetzen
Delivery Time
1-2 egun
Kopurua eskura
629762 Pieces
Erreferentzia Prezioa
USD 0.51975
Gure prezioa
- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SI4626ADY-T1-GE3 stock saltzen da.
Aukera Ontziak eta denbora bidalketa:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Ordainketa Aukerak:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

zehaztapenak SI4626ADY-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik
stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko
Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Taldea zenbakia : SI4626ADY-T1-GE3
fabrikatzailea : Vishay Siliconix
deskribapena : MOSFET N-CH 30V 30A 8-SOIC
Series : TrenchFET®
Taldearen egoera : Active
FET Mota : N-Channel
Teknologia : MOSFET (Metal Oxide)
Xukatu iturburuko tentsioa (Vdss) : 30V
Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 30A (Tc)
Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Ateko karga (Qg) (Max) @ Vgs : 125nC @ 10V
Vgs (Max) : ±20V
Sarrerako ahalmena (Ciss) (Max) @ Vds : 5370pF @ 15V
FET Ezaugarria : -
Potentzia xahutzea (Max) : 3W (Ta), 6W (Tc)
Eragiketa tenperatura : -55°C ~ 150°C (TJ)
Muntatzeko mota : Surface Mount
Hornitzaileentzako gailu paketea : 8-SO
Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)
pisu : -
baldintza : Berria eta original
Erlazionatutako estekak : SI462 , SI4626AD

Dokumentuak SI4626ADY-T1-GE3

produktu erlazionatutako SI4626ADY-T1-GE3 Vishay Siliconix

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