TPH6400ENH,L1Q - MOSFET N-CH 200V 21A 8-SOP

Fabrikatzailea Taldea zenbakia

TPH6400ENH,L1Q

Barne Taldea zenbakia

ABC-TPH6400ENH,L1Q

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET N-CH 200V 21A 8-SOP

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

922292 Pieces

Erreferentzia Prezioa

~~USD 0.3549~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TPH6400ENH,L1Q stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TPH6400ENH,L1Q

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TPH6400ENH,L1Q

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET N-CH 200V 21A 8-SOP

Series : U-MOSVIII-H

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 13A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 64 mOhm @ 6.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 300µA

Ateko karga (Qg) (Max) @ Vgs : 11.2nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1100pF @ 100V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.6W (Ta), 57W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-SOP Advance (5x5)

Paketea / Kaxa : 8-PowerVDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TPH6 , TPH6400

Dokumentuak TPH6400ENH,L1Q

Fitxak : TPH6400ENH,L1Q.pdf

produktu erlazionatutako TPH6400ENH,L1Q Toshiba Semiconductor and Storage

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