C2M0045170P - ZFET SIC DMOSFET 1700V VDS RDS

Fabrikatzailea Taldea zenbakia

C2M0045170P

Barne Taldea zenbakia

ABC-C2M0045170P

fabrikatzailea

Cree/Wolfspeed

Azalpen laburra

ZFET SIC DMOSFET 1700V VDS RDS

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

35616 Pieces

Erreferentzia Prezioa

~~USD 42~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute C2M0045170P stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak C2M0045170P

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : C2M0045170P

fabrikatzailea : Cree/Wolfspeed

deskribapena : ZFET SIC DMOSFET 1700V VDS RDS

Series : C2M™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : SiCFET (Silicon Carbide)

Xukatu iturburuko tentsioa (Vdss) : 1700V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 72A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 20V

Rds On (Max) @ Id, Vgs : 59 mOhm @ 50A, 20V

Vgs (th) (Max) @ Id : 4V @ 18mA

Ateko karga (Qg) (Max) @ Vgs : 188nC @ 20V

Vgs (Max) : +25V, -10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3672pF @ 1000V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 520W (Tc)

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-247-4L

Paketea / Kaxa : TO-247-4

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : C2M , C2M00

Dokumentuak C2M0045170P

Fitxak : C2M0045170P.pdf

produktu erlazionatutako C2M0045170P Cree/Wolfspeed

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