SE10FGHM3/I - DIODE GEN PURP 400V 1A DO219AB

Fabrikatzailea Taldea zenbakia

SE10FGHM3/I

Barne Taldea zenbakia

ABC-SE10FGHM3/I

fabrikatzailea

Vishay Semiconductor Diodes Division

Azalpen laburra

DIODE GEN PURP 400V 1A DO219AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

8566467 Pieces

Erreferentzia Prezioa

~~USD 0.03821~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SE10FGHM3/I stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SE10FGHM3/I

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SE10FGHM3/I

fabrikatzailea : Vishay Semiconductor Diodes Division

deskribapena : DIODE GEN PURP 400V 1A DO219AB

Series : Automotive, AEC-Q101

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 400V

Oraingoa - Batez besteko laukizatua (Io) : 1A

Tentsioa - Aurrera (Vf) (Max) @ If : 1.05V @ 1A

Abiadura : Standard Recovery >500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : 780ns

Oraingoa - alderantzizko ihesa @ Vr : 5µA @ 400V

Edukiera @ Vr, F : 7.5pF @ 4V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : DO-219AB

Hornitzaileentzako gailu paketea : DO-219AB (SMF)

Eragiketa tenperatura - Junction : -55°C ~ 175°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SE1 , SE10F

Dokumentuak SE10FGHM3/I

Fitxak : SE10FGHM3/I.pdf

produktu erlazionatutako SE10FGHM3/I Vishay Semiconductor Diodes Division

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