FQD9N25TM-F080 - MOSFET N-CH 250V 7.4A DPAK

Fabrikatzailea Taldea zenbakia

FQD9N25TM-F080

Barne Taldea zenbakia

ABC-FQD9N25TM-F080

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 250V 7.4A DPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1072918 Pieces

Erreferentzia Prezioa

~~USD 0.305075~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQD9N25TM-F080 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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zehaztapenak FQD9N25TM-F080

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQD9N25TM-F080

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 250V 7.4A DPAK

Series : QFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 250V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 7.4A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 420 mOhm @ 3.7A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 20nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 700pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta), 55W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : D-Pak

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQD9 , FQD9N25

Dokumentuak FQD9N25TM-F080

Fitxak : FQD9N25TM-F080.pdf

produktu erlazionatutako FQD9N25TM-F080 ON Semiconductor

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