IRFB3207ZGPBF - MOSFET N-CH 75V 120A TO-220AB

Fabrikatzailea Taldea zenbakia

IRFB3207ZGPBF

Barne Taldea zenbakia

ABC-IRFB3207ZGPBF

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 75V 120A TO-220AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

212541 Pieces

Erreferentzia Prezioa

~~USD 1.54~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRFB3207ZGPBF stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRFB3207ZGPBF

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRFB3207ZGPBF

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 75V 120A TO-220AB

Series : HEXFET®

Taldearen egoera : Not For New Designs

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 75V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 120A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.1 mOhm @ 75A, 10V

Vgs (th) (Max) @ Id : 4V @ 150µA

Ateko karga (Qg) (Max) @ Vgs : 170nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6920pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 300W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220AB

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRFB , IRFB32

Dokumentuak IRFB3207ZGPBF

Fitxak : IRFB3207ZGPBF.pdf

produktu erlazionatutako IRFB3207ZGPBF Infineon Technologies

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