SPB80N10L G - MOSFET N-CH 100V 80A TO-263

Fabrikatzailea Taldea zenbakia

SPB80N10L G

Barne Taldea zenbakia

ABC-SPB80N10L G

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 100V 80A TO-263

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

59249 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SPB80N10L G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SPB80N10L G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SPB80N10L G

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 100V 80A TO-263

Series : SIPMOS®

Taldearen egoera : Discontinued at Digi-Key

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 80A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 14 mOhm @ 58A, 10V

Vgs (th) (Max) @ Id : 2V @ 2mA

Ateko karga (Qg) (Max) @ Vgs : 240nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4540pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 250W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PG-TO263-3-2

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SPB , SPB80

Dokumentuak SPB80N10L G

Fitxak : SPB80N10L G.pdf

produktu erlazionatutako SPB80N10L G Infineon Technologies

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