SQ1470AEH-T1_GE3 - MOSFET N-CH 30V 2.8A SC70

Fabrikatzailea Taldea zenbakia

SQ1470AEH-T1_GE3

Barne Taldea zenbakia

ABC-SQ1470AEH-T1_GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET N-CH 30V 2.8A SC70

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

3022383 Pieces

Erreferentzia Prezioa

~~USD 0.1083~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SQ1470AEH-T1_GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SQ1470AEH-T1_GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SQ1470AEH-T1_GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET N-CH 30V 2.8A SC70

Series : Automotive, AEC-Q101, TrenchFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1.7A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 65 mOhm @ 4.2A, 4.5V

Vgs (th) (Max) @ Id : 1.6V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 5.2nC @ 4.5V

Vgs (Max) : ±12V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 450pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.3W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-363, SC70

Paketea / Kaxa : 6-TSSOP, SC-88, SOT-363

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SQ147 , SQ1470AE

Dokumentuak SQ1470AEH-T1_GE3

Fitxak : SQ1470AEH-T1_GE3.pdf

produktu erlazionatutako SQ1470AEH-T1_GE3 Vishay Siliconix

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