DMN1016UCB6-7 - MOSFET N-CH 12V 5.5A U-WLB1510-6

Fabrikatzailea Taldea zenbakia

DMN1016UCB6-7

Barne Taldea zenbakia

ABC-DMN1016UCB6-7

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH 12V 5.5A U-WLB1510-6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2454620 Pieces

Erreferentzia Prezioa

~~USD 0.13335~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN1016UCB6-7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN1016UCB6-7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN1016UCB6-7

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH 12V 5.5A U-WLB1510-6

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 12V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 5.5A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 20 mOhm @ 1.5A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 4.2nC @ 4.5V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 423pF @ 6V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 920mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : U-WLB1510-6

Paketea / Kaxa : 6-UFBGA, WLBGA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN1 , DMN101

Dokumentuak DMN1016UCB6-7

Fitxak : DMN1016UCB6-7.pdf

produktu erlazionatutako DMN1016UCB6-7 Diodes Incorporated

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