1N4448HLP-7 - DIODE GEN PURP 80V 125MA 2DFN

Fabrikatzailea Taldea zenbakia

1N4448HLP-7

Barne Taldea zenbakia

ABC-1N4448HLP-7

fabrikatzailea

Diodes Incorporated

Azalpen laburra

DIODE GEN PURP 80V 125MA 2DFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

6011467 Pieces

Erreferentzia Prezioa

~~USD 0.05445~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute 1N4448HLP-7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak 1N4448HLP-7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : 1N4448HLP-7

fabrikatzailea : Diodes Incorporated

deskribapena : DIODE GEN PURP 80V 125MA 2DFN

Series : -

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 80V

Oraingoa - Batez besteko laukizatua (Io) : 125mA

Tentsioa - Aurrera (Vf) (Max) @ If : 1V @ 100mA

Abiadura : Small Signal =< 200mA (Io), Any Speed

Alderantzizko berreskurapen denbora (trr) : 4ns

Oraingoa - alderantzizko ihesa @ Vr : 100nA @ 80V

Edukiera @ Vr, F : 3pF @ 0.5V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 0402 (1006 Metric)

Hornitzaileentzako gailu paketea : X1-DFN1006-2

Eragiketa tenperatura - Junction : -65°C ~ 150°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : 1N4 , 1N444

Dokumentuak 1N4448HLP-7

Fitxak : 1N4448HLP-7.pdf

produktu erlazionatutako 1N4448HLP-7 Diodes Incorporated

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