TJ8S06M3L(T6L1,NQ) - MOSFET P-CH 60V 8A DPAK-3

Fabrikatzailea Taldea zenbakia

TJ8S06M3L(T6L1,NQ)

Barne Taldea zenbakia

ABC-TJ8S06M3L(T6L1,NQ)

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET P-CH 60V 8A DPAK-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1416982 Pieces

Erreferentzia Prezioa

~~USD 0.231~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TJ8S06M3L(T6L1,NQ) stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TJ8S06M3L(T6L1,NQ)

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TJ8S06M3L(T6L1,NQ)

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET P-CH 60V 8A DPAK-3

Series : U-MOSVI

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 8A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 104 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : +10V, -20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 890pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 27W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : DPAK+

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TJ8S06 , TJ8S06M3L

Dokumentuak TJ8S06M3L(T6L1,NQ)

Fitxak : TJ8S06M3L(T6L1,NQ).pdf

produktu erlazionatutako TJ8S06M3L(T6L1,NQ) Toshiba Semiconductor and Storage

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