GP2M011A090NG - MOSFET N-CH 900V 11A TO3PN

Fabrikatzailea Taldea zenbakia

GP2M011A090NG

Barne Taldea zenbakia

ABC-GP2M011A090NG

fabrikatzailea

Global Power Technologies Group

Azalpen laburra

MOSFET N-CH 900V 11A TO3PN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

84992 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute GP2M011A090NG stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak GP2M011A090NG

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : GP2M011A090NG

fabrikatzailea : Global Power Technologies Group

deskribapena : MOSFET N-CH 900V 11A TO3PN

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 900V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 11A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 900 mOhm @ 5.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 84nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3240pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 416W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-3PN

Paketea / Kaxa : TO-3P-3, SC-65-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : GP2M , GP2M01

Dokumentuak GP2M011A090NG

Fitxak : GP2M011A090NG.pdf

produktu erlazionatutako GP2M011A090NG Global Power Technologies Group

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