PHD16N03T,118 - MOSFET N-CH 30V 13.1A DPAK

Fabrikatzailea Taldea zenbakia

PHD16N03T,118

Barne Taldea zenbakia

ABC-PHD16N03T,118

fabrikatzailea

NXP USA Inc.

Azalpen laburra

MOSFET N-CH 30V 13.1A DPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

45474 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute PHD16N03T,118 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak PHD16N03T,118

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : PHD16N03T,118

fabrikatzailea : NXP USA Inc.

deskribapena : MOSFET N-CH 30V 13.1A DPAK

Series : TrenchMOS™

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 13.1A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 5.2nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 180pF @ 30V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 32.6W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : DPAK

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : PHD1 , PHD16N

Dokumentuak PHD16N03T,118

Fitxak : PHD16N03T,118.pdf

produktu erlazionatutako PHD16N03T,118 NXP USA Inc.

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