1N6479HE3/96 - DIODE GEN PURP 100V 1A DO213AB

Fabrikatzailea Taldea zenbakia

1N6479HE3/96

Barne Taldea zenbakia

ABC-1N6479HE3/96

fabrikatzailea

Vishay Semiconductor Diodes Division

Azalpen laburra

DIODE GEN PURP 100V 1A DO213AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

4655448 Pieces

Erreferentzia Prezioa

~~USD 0.07031~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute 1N6479HE3/96 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak 1N6479HE3/96

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : 1N6479HE3/96

fabrikatzailea : Vishay Semiconductor Diodes Division

deskribapena : DIODE GEN PURP 100V 1A DO213AB

Series : SUPERECTIFIER®

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 100V

Oraingoa - Batez besteko laukizatua (Io) : 1A

Tentsioa - Aurrera (Vf) (Max) @ If : 1.1V @ 1A

Abiadura : Standard Recovery >500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : -

Oraingoa - alderantzizko ihesa @ Vr : 10µA @ 100V

Edukiera @ Vr, F : 8pF @ 4V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : DO-213AB, MELF (Glass)

Hornitzaileentzako gailu paketea : DO-213AB

Eragiketa tenperatura - Junction : -65°C ~ 175°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : 1N64 , 1N6479

Dokumentuak 1N6479HE3/96

Fitxak : 1N6479HE3/96.pdf

produktu erlazionatutako 1N6479HE3/96 Vishay Semiconductor Diodes Division

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