BUK9Y12-55B,115 - MOSFET N-CH 55V 61.8A LFPAK

Fabrikatzailea Taldea zenbakia

BUK9Y12-55B,115

Barne Taldea zenbakia

ABC-BUK9Y12-55B,115

fabrikatzailea

Nexperia USA Inc.

Azalpen laburra

MOSFET N-CH 55V 61.8A LFPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1668695 Pieces

Erreferentzia Prezioa

~~USD 0.196155~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BUK9Y12-55B,115 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BUK9Y12-55B,115

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BUK9Y12-55B,115

fabrikatzailea : Nexperia USA Inc.

deskribapena : MOSFET N-CH 55V 61.8A LFPAK

Series : Automotive, AEC-Q101, TrenchMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 55V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 61.8A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.15V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 32nC @ 5V

Vgs (Max) : ±15V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2880pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 106W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : LFPAK56, Power-SO8

Paketea / Kaxa : SC-100, SOT-669

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BUK9Y , BUK9Y12

Dokumentuak BUK9Y12-55B,115

Fitxak : BUK9Y12-55B,115.pdf

produktu erlazionatutako BUK9Y12-55B,115 Nexperia USA Inc.

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