RN2712JE(TE85L,F) - TRANS 2PNP PREBIAS 0.1W ESV

Fabrikatzailea Taldea zenbakia

RN2712JE(TE85L,F)

Barne Taldea zenbakia

ABC-RN2712JE(TE85L,F)

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

TRANS 2PNP PREBIAS 0.1W ESV

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

7422324 Pieces

Erreferentzia Prezioa

~~USD 0.0441~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RN2712JE(TE85L,F) stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RN2712JE(TE85L,F)

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RN2712JE(TE85L,F)

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : TRANS 2PNP PREBIAS 0.1W ESV

Series : -

Taldearen egoera : Active

Transistore mota : 2 PNP - Pre-Biased (Dual) (Emitter Coupled)

Unean - Bildumagilea (Ik) (Max) : 100mA

Tentsioa - Kolektorearen emisorearen matxura (Max) : 50V

Erresistorea - Oinarria (R1) : 22 kOhms

Erresistorea - Emisidearen oinarria (R2) : -

DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V

Vce saturazioa (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Unean - Bildumaren ebakia (Max) : 100nA (ICBO)

Maiztasuna - Trantsizioa : 200MHz

Potentzia - Max : 100mW

Muntatzeko mota : Surface Mount

Paketea / Kaxa : SOT-553

Hornitzaileentzako gailu paketea : ESV

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RN271 , RN2712JE

Dokumentuak RN2712JE(TE85L,F)

Fitxak : RN2712JE(TE85L,F).pdf

produktu erlazionatutako RN2712JE(TE85L,F) Toshiba Semiconductor and Storage

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