SIHD1K4N60E-GE3 - MOSFET N-CH DPAK TO-252

Fabrikatzailea Taldea zenbakia

SIHD1K4N60E-GE3

Barne Taldea zenbakia

ABC-SIHD1K4N60E-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET N-CH DPAK TO-252

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

495943 Pieces

Erreferentzia Prezioa

~~USD 0.66~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SIHD1K4N60E-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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zehaztapenak SIHD1K4N60E-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SIHD1K4N60E-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET N-CH DPAK TO-252

Series : E

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 4.2A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.45 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 7.5nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 172pF @ 100V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 63W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-252AA

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SIHD1 , SIHD1K4

Dokumentuak SIHD1K4N60E-GE3

Fitxak : SIHD1K4N60E-GE3.pdf

produktu erlazionatutako SIHD1K4N60E-GE3 Vishay Siliconix

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