RSD080N06TL - MOSFET N-CH 60V 8A CPT3

Fabrikatzailea Taldea zenbakia

RSD080N06TL

Barne Taldea zenbakia

ABC-RSD080N06TL

fabrikatzailea

Rohm Semiconductor

Azalpen laburra

MOSFET N-CH 60V 8A CPT3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1416982 Pieces

Erreferentzia Prezioa

~~USD 0.231~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RSD080N06TL stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RSD080N06TL

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RSD080N06TL

fabrikatzailea : Rohm Semiconductor

deskribapena : MOSFET N-CH 60V 8A CPT3

Series : -

Taldearen egoera : Not For New Designs

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 8A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4V, 10V

Rds On (Max) @ Id, Vgs : 80 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 9.4nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 380pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 15W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : CPT3

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RSD , RSD08

Dokumentuak RSD080N06TL

Fitxak : RSD080N06TL.pdf

produktu erlazionatutako RSD080N06TL Rohm Semiconductor

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