DF11MR12W1M1B11BOMA1 - MOSFET MODULE 1200V 50A

Fabrikatzailea Taldea zenbakia

DF11MR12W1M1B11BOMA1

Barne Taldea zenbakia

ABC-DF11MR12W1M1B11BOMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET MODULE 1200V 50A

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

35445 Pieces

Erreferentzia Prezioa

~~USD 67.18~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DF11MR12W1M1B11BOMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DF11MR12W1M1B11BOMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DF11MR12W1M1B11BOMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET MODULE 1200V 50A

Series : CoolSiC™

Taldearen egoera : Obsolete

FET Mota : 2 N-Channel (Dual)

FET Ezaugarria : Silicon Carbide (SiC)

Xukatu iturburuko tentsioa (Vdss) : 1200V (1.2kV)

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 50A

Rds On (Max) @ Id, Vgs : 23 mOhm @ 50A, 15V

Vgs (th) (Max) @ Id : 5.5V @ 20mA

Ateko karga (Qg) (Max) @ Vgs : 125nC @ 5V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3950pF @ 800V

Potentzia - Max : 20mW

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Chassis Mount

Paketea / Kaxa : Module

Hornitzaileentzako gailu paketea : Module

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DF11MR , DF11MR12W1

Dokumentuak DF11MR12W1M1B11BOMA1

Fitxak : DF11MR12W1M1B11BOMA1.pdf

produktu erlazionatutako DF11MR12W1M1B11BOMA1 Infineon Technologies

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