APT34N80B2C3G - MOSFET N-CH 800V 34A T-MAX

Fabrikatzailea Taldea zenbakia

APT34N80B2C3G

Barne Taldea zenbakia

ABC-APT34N80B2C3G

fabrikatzailea

Microsemi Corporation

Azalpen laburra

MOSFET N-CH 800V 34A T-MAX

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

73701 Pieces

Erreferentzia Prezioa

~~USD 5.71~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute APT34N80B2C3G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak APT34N80B2C3G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : APT34N80B2C3G

fabrikatzailea : Microsemi Corporation

deskribapena : MOSFET N-CH 800V 34A T-MAX

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 34A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 145 mOhm @ 22A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 2mA

Ateko karga (Qg) (Max) @ Vgs : 355nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4510pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 417W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : T-MAX™ [B2]

Paketea / Kaxa : TO-247-3 Variant

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : APT3 , APT34N

Dokumentuak APT34N80B2C3G

Fitxak : APT34N80B2C3G.pdf

produktu erlazionatutako APT34N80B2C3G Microsemi Corporation

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