BSC010N04LSIATMA1 - MOSFET N-CH 40V 37A 8TDSON

Fabrikatzailea Taldea zenbakia

BSC010N04LSIATMA1

Barne Taldea zenbakia

ABC-BSC010N04LSIATMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 40V 37A 8TDSON

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

394394 Pieces

Erreferentzia Prezioa

~~USD 0.82992~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BSC010N04LSIATMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BSC010N04LSIATMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BSC010N04LSIATMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 40V 37A 8TDSON

Series : OptiMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 40V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 37A (Ta), 100A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.05 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 87nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6200pF @ 20V

FET Ezaugarria : Schottky Diode (Body)

Potentzia xahutzea (Max) : 2.5W (Ta), 139W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PG-TDSON-8 FL

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BSC01 , BSC010N0

Dokumentuak BSC010N04LSIATMA1

Fitxak : BSC010N04LSIATMA1.pdf

produktu erlazionatutako BSC010N04LSIATMA1 Infineon Technologies

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