BUZ30AH3045AATMA1 - MOSFET N-CH 200V 21A TO-263

Fabrikatzailea Taldea zenbakia

BUZ30AH3045AATMA1

Barne Taldea zenbakia

ABC-BUZ30AH3045AATMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 200V 21A TO-263

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

580853 Pieces

Erreferentzia Prezioa

~~USD 0.563515~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BUZ30AH3045AATMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BUZ30AH3045AATMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BUZ30AH3045AATMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 200V 21A TO-263

Series : SIPMOS®

Taldearen egoera : Not For New Designs

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 21A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 130 mOhm @ 13.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1900pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 125W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : D²PAK (TO-263AB)

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BUZ30 , BUZ30AH3

Dokumentuak BUZ30AH3045AATMA1

Fitxak : BUZ30AH3045AATMA1.pdf

produktu erlazionatutako BUZ30AH3045AATMA1 Infineon Technologies

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